Work number - P 47 FILED
Presented by the National Technical University «Kharkiv Polytechnic Institute»
Authors: Мenshikova S.I., Budnik A.V., Doroshenko A.N., Orlova D.S.
The purpose of the work was fundamental research to reveal size effects in PbTe, PbSe, Bi2Te3 and Bi1‑xSbx thin films known as promising thermoelectric (TE) materials and belonging to the topological insulators through the study of kinetic properties dependences on the different factors, which opens wide possibilities of using them in thermoelectricity and other fields of electronics.
The authors revealed oscillations of transport properties dependences on thin film thickness, presence of which is associated with quantization of the charge carriers’ energy spectrum and defines the possibility to manage TE parameters by varying the film thickness.
Experimental results were interpreted in the framework of infinitely deep rectangular potential well model and Fuchs-Sondheimer theory that is of fundamental importance to the development of ideas of classical and quantum size effects in semiconductor 2D-structures and modeling of thin films’ properties which in turn significantly simplifies the task of finding new materials for TE energy conversion.
It is shown that using of the cheap and simple method (one-source thermal evaporation of polycrystals in vacuum), allows to grow V2VI3, IV VI and Bi1-xSbx thin films of high structural quality and TE parameters comparable with those for films fabricated by more expensive and complex methods.
Number of publications: 98 (one on the topic of scientific work – 88), including 38 articles in journals indexed in Scopus database (one on the topic of scientific work – 29). According to the Scopus database the total number of authors links is 119, h-index – 7 According to Google Scholar database the total number of authors links is 186, h-index – 9.