Laser annealing of non-stochemometric SiOx films

Work number - M 19 AWARDED

Presented by Chuiko Institute of Surface Chemistry NAS of Ukraine

Authors:  Havryliuk O.O., Pylypova O.V.

 The purpose of this study was to solve the scientific problem, which consists in creating the physical and technological basis for laser-induced annealing of non-stoichiometric SiOx films.

The authors obtained a numerical solution of the Fourier equation and proposed approaches for its use in modeling laser annealing of non-stoichiometric SiOx films.The propagation of temperature profiles in this structure during laser annealing of various intensities is studied, which makes it possible to predict the formation of nanoparticles in a volume whose growth strongly depends on temperature.

 The nature of the changes that occurred in SiO₂ (Si) films after annealing by the laser has been clarified.

In order to justify the possibility of using these structures after laser annealing in microelectronics, their electrical characteristics have been experimentally investigated.

The electrical characteristics of these films after thermal and laser annealing have been analyzed.

For the presented topic, 37 scientific papers were published: 1monograph, 18 papers (7 - in foreign journals) and 18- the theses of conferences.  A common amount of references to the works of the authors is 14 (according to Scopus database), 34 (according to Google Shcolar database). h-index of quoting is 2 (according to Scopus database), 4 (according to Google Shcolar database)

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