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Gas sensors based on semiconductor porous layers


Work number - M 40 AWARDED

Presented Kremenchuk Mykhailo Ostrogradskyi National University

Authors:
Kohdas Maksim Hryhorovych, Nayda Vitalii Volodymyrovych, Rusinchuk Natalia Mykolaivna

The aim of the work is to improve gas sensors based on nanoscale porous layers of semiconductors, by improving the technology for producing porous layers with different pore diameters (40-60 nm) and creating Schottky contacts in them, which will improve the performance of Schottky diode sensors both in terms of sensitivity and and in terms of reducing response time for gas detection.

The authors improved the method for producing a porous layer on semiconductor substrates, characterized by the use of a pulsed current, which made it possible to obtain porous films with the most uniform porosity.

The method of decomposing the photoluminescence spectra into Gausians was further developed, which, unlike the existing ones, made it possible to analyze the por-Si photoluminescence spectra with an error of ± 2%, which made it possible to automate the process of measuring the por-Si photoluminescence spectra with a resolution of 0.1 nm in the range from 200 -2000nm.

Refined scientific data on photoluminescence in por-Si obtained by anodic digestion. It was shown that the peak of the por-Si photoluminescence emission spectrum is at a wavelength of 650 nm.

Clarification of scientific data on the dependence of the height of the Schottky barrier on the thickness of the porous layer.

Clarification of scientific data on the dependence of the height of the Schottky barrier on the applied voltage in the landslide zone, which causes, accordingly, a change in the ideality factor n.

The effect of the porosity of the hydrogen-sensitive contact of the Pd / por-GaAs Schottky diode on the speed and sensitivity of the Senor was studied.

A technology has been developed for the manufacture of a porous layer with a thickness of up to 20 nm and a pore diameter in the range of d = 40-60 nm. and production of contacts to the porous layer based on Pd, which made it possible to improve the performance of Schottky diode sensors both in terms of sensitivity and in terms of reducing the response time for gas detection.

Scientific and applied results obtained in the framework of the work allow to obtain an economic effect of about 200 thousand UAH. per year due to cheaper production of gas sensors and an increase in the number of suitable electronic devices based on porous semiconductors.

Number of publications: 8, including 18 papers (10 - in foreign journals, 12 – are included in the SCOPUS and Web of science databases). According to the Scopus database total number of authors citations – 4, h-index (the work) = 3; according to Google Scholar database total number of citations – 5, h-index (the work) = 3. The novelty and competitive technical solutions are protected by and 1 patent for utility model.

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